| 摘要 |
<p>A method for forming a resist pattern is provided to improve permeation and solubility of a resist to a developer by applying a pressure-reducing process during a developing process after a developer coating process. A resist layer(102) is formed on an upper surface of a semiconductor substrate(100). An exposure process is performed to form an exposure part on the resist layer. A developer coating process is performed to coat the resist layer including the exposure part with a developer(106). A pressure-reducing process is performed to increase a free volume between polymers which are formed in an interface between the exposure part and a non-exposure part. A rinsing process is performed to remove the exposure part.</p> |
