发明名称 INFORMATION STORAGE DEVICE USING MAGNETIC DOMAIN WALL MOVEMENT AND METHOD OF OPERATING THE SAME
摘要 An information storage device using magnetic domain wall movement and an operating method thereof are provided to increase the number of bits of information to be recorded in one memory cell, thereby increasing integrity and storage capacity. An information storage device using magnetic domain wall movement comprises a magnetic layer(100) for data storage, and first and second conductive layers(200a,200b) which make contact with both ends of the magnetic layer. The magnetic layer includes first and second pinning sites(P1,P2) in which magnetic domain wall is pinned. The widths of the first and second pinning sites are not the same.
申请公布号 KR20090078129(A) 申请公布日期 2009.07.17
申请号 KR20080003933 申请日期 2008.01.14
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 BAE, JI YOUNG;KIM, KWANG SEOK;KLAUI MATHIAS
分类号 G11B5/02;G11B5/00;G11C11/15 主分类号 G11B5/02
代理机构 代理人
主权项
地址