发明名称 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 A method for manufacturing a semiconductor device is provided to increase a yield and to improve an electrical characteristic according to interference between patterns by increasing the resolution of the patterns. An exposure process and a developing process or an etch process are performed to expose and develop or etch a wafer(300). A cleaning solution(330) is supplied to the wafer through a central nozzle of nozzles. A cleaning process is performed to rotate and clean the wafer in order to drain the cleaning solution from a center to an edge. In the cleaning process, the wafer is loaded into a cleaning apparatus including the nozzles. The nozzles are arranged in the center and edges of the wafer. The central nozzle arranged above the center of the wafer is used for supplying the cleaning solution to the wafer.
申请公布号 KR20090078086(A) 申请公布日期 2009.07.17
申请号 KR20080003876 申请日期 2008.01.14
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KIM, JONG HOON
分类号 H01L21/304 主分类号 H01L21/304
代理机构 代理人
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