METHOD FOR DETECTING FLAT ORIENTATION OF SILICON INGOT USING X-RAY GONIOMETER

摘要

A method for detecting a flat orientation of a silicon ingot using an X-ray goniometer is provided to improve detection accuracy of a sub-flat orientation to detection accuracy of an X-ray diffraction peak by compensating an angle difference. A main flat orientation of a (110) silicon ingot is detected by using an X-ray diffraction analyzer(S100). A goniometer of the X-ray diffraction analyzer is set to detect an orientation different from the main flat orientation in a generating state of an X-ray diffraction peak. An angle of the goniometer corresponding to an angle difference between the orientation and the sub-flat orientation of the (110) silicon ingot is compensated(S220). The X-ray diffraction peak of the orientation is detected by rotating the (110) silicon ingot around a central axis(S230,S240). The detected orientation of the X-ray diffraction peak is determined as the sub-flat direction of the (110) silicon ingot.