SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

A semiconductor device and a manufacturing method thereof are provided to increase an operational speed thereof by forming a metal line having a low resistance to reduce a RC delay. A first interlayer dielectric(102) including a trench(108) is formed on a semiconductor substrate(100). A diffusion barrier(112) is formed on an entire surface of the semiconductor substrate including the trench. A metal layer is formed on the diffusion barrier including the trench in order to fill up the trench. A planarization etch process for the diffusion barrier and the metal layer is performed to maintain the diffusion barrier and the metal layer within the trench. An etch process is performed to lower the height of the metal layer in order to increase a distance between the metal lines. A capping layer(116) is formed on the entire surface of the semiconductor substrate including an exposed sidewall of the first interlayer dielectric. A second interlayer dielectric(106) is formed on the capping layer.