| 摘要 |
A method for manufacturing a flash memory device is provided to increase a program speed by improving interference between a cell and a cell. A tunnel insulating layer(114), a first conductive layer, and a hard mask layer are successively formed on an upper surface of a semiconductor substrate(110). A plurality of trenches are formed by etching the hard mask layer, the first conductive layer, the tunnel insulating layer, and a part of the semiconductor substrate. An isolation layer(120) is formed on the predetermined region of the semiconductor substrate including the trenches. The hard mask layer is removed from the semiconductor substrate. A passivation layer is formed on the first conductive layer. An etch process is performed by using the passivation layer as an etch barrier. An EFH(Effective Field oxide Height) is adjusted by etching the isolation layer.
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