LIGHT EMITTING DEVICE OF DOUBLE GATE CONTROLLED DIODE STRUCTURE

摘要

A light emitting device using a double gate controlled diode structure is provided to perform an operation at a relatively low voltage and to reduce power consumption in comparison with a linear emission operation by performing a surface emission operation. A light emitting device includes a P-type semiconductor(10), an N-type semiconductor(20), a semiconductor layer(30), a first electrode(40), and a second electrode(50). A semiconductor film is connected between the P-type semiconductor and the N-type semiconductor. The first electrode is positioned on the semiconductor film. The first electrode is formed to apply electric field to the semiconductor film. The second electrode is positioned under the semiconductor film. The second electrode is formed to apply the additional electric field to the semiconductor film.