| 摘要 |
<p>An exposure mask and a method for forming a resist pattern using the same are provided to improve process stability and process reliability by maintaining a desired critical dimension and a desired shape through a final main pattern after an etch process for forming a contact hole. An exposure mask includes a plurality of light-shielding layer patterns(312) and trenches. The light-shielding layer patterns are formed on light-shielding regions of a transparent substrate(310). The transparent substrate includes light-transmitting regions as well as the light-shielding regions. The trenches are formed on the transparent substrate corresponding to edges of the light-transmitting regions. The trenches have widths of 40 to 120nm. The light-shielding layer patterns have widths of 90 to 250nm.</p> |
