| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device in which stability of application voltage control of a memory cell is improved and which is excellent in the control property of drain voltage. <P>SOLUTION: The nonvolatile semiconductor memory device using a bit scan system includes: a plurality of memory cells; a write buffer to which data written in a plurality of memory cells are input; a count circuit in which data input to the write buffer is searched and the number of bits of data programmed simultaneously to the plurality of memory cells is decided; a write circuit providing write voltage to the plurality of memory cells in accordance with data; and a voltage regulator for supplying voltage Vpb for control to the write circuit, wherein the voltage regulator includes a control means in which the number of bits is counted and voltage Vpb for control is supplied in accordance with the number of bits. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
