发明名称 CONTROL CIRCUIT FOR POWER SEMICONDUCTOR DEVICES
摘要 <P>PROBLEM TO BE SOLVED: To solve the following problem that may be encountered when IGBT modules are connected in parallel: variation in temperature is caused in a IGBT chip due to variation in characteristic or structure and, if the temperature is suppressed to an absolute maximum temperature, the size of equipment is increased and this leads to increased cost. <P>SOLUTION: Each module with an embedded temperature detecting sensor is provided with a temperature detector. The magnitude of the difference in temperature between them is determined by a comparator 19. The turn-on timing of a high-temperature module is delayed by an integration circuit of a resistor 25a and a capacitor 22a and its temperature is thereby reduced. <P>COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009159662(A) 申请公布日期 2009.07.16
申请号 JP20070332014 申请日期 2007.12.25
申请人 FUJI ELECTRIC SYSTEMS CO LTD 发明人 TAKIZAWA AKITAKE
分类号 H02M1/00;H02M7/48 主分类号 H02M1/00
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