| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor spin device capable of enhancing an MR ratio, and to provide a spin FET capable of enhancing the MR ratio, especially, between a source and a drain. SOLUTION: Interface resistance on the source side of a spin MOSFET and interface resistance on the drain side are originally different in value, but impurities are added on the interfaces to nearly equalize them to each other. Consequently, the electric symmetry of the spin MOSFET is secured and an increase in the MR ratio is found out by analyzing conditions of this case. COPYRIGHT: (C)2009,JPO&INPIT
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