METHODS OF FORMING HIGH DENSITY METAL WIRING FOR FINE LINE AND SPACE PACKAGING APPLICATIONS AND STRUCTURES FORMED THEREBY

摘要

Methods of forming microelectronic device structures are described. Those methods may include forming at least one opening through a build up structure and a photo sensitive material disposed on the build up structure, wherein the build up structure comprises a portion of a package substrate, filling the at least one opening with a metal containing nanopaste, and sintering the metal containing nanopaste to form a bulk property metal structure in the at least one opening.