| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device wherein an isolation insulating film between element formation regions is protected, and elements can be electrically connected to wiring films without causing junction leakage. SOLUTION: This semiconductor device is equipped with the isolation insulating film 3 formed on a semiconductor substrate 1 to demarcate the element formation regions 2, the elements formed in the element formation region 2, an interlayer insulating film 5 formed on the semiconductor substrate 1 so as to cover the elements and the isolation insulating film 3, and wiring films 6, 7 electrically connected to the elements embedded in contact holes formed by etching the interlayer insulating film 5. A protective laminated film 4 formed by laminating three or more layers of insulating films 4a, 4b, 4c to prevent the isolation insulating film 3 from being corroded by etching is formed at least between the isolation insulating film 3 and the interlayer insulating film 5. COPYRIGHT: (C)2009,JPO&INPIT
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