| 摘要 |
PROBLEM TO BE SOLVED: To provide a technology that allows characteristic parameters of a vertical-type field effect transistor to be designed freely. SOLUTION: A vertical-type field effect transistor includes a semiconductor layer 2 having multiple trenches 10 with a stripe geometry, a gate electrode 50 partially embedded in the multiple trenches 10, base regions 20 and 21, and a source region 25. The gate electrode 50 includes multiple first gate structures 51 and at least one second gate structure 52. The multiple first gate structure 51 are formed in the multiple trenches 10, and each of the first gate structures 51 has a protrusion 51a protruding from trenches 10 and an embedded portion 51b embedded in trenches 10. The second gate structure 52 is formed so as to bridge the protrusions 51a of adjacent first gate structures 51. Each embedded portion 51b is formed in trenches 10 through a first insulating film 31. The second gate structure 52 is formed on the source region 25 through a second insulating film 32 thicker than the first insulating film 31. COPYRIGHT: (C)2009,JPO&INPIT
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