POLYMERIZABLE FLUORINE-CONTAINING MONOMER, FLUORINE-CONTAINING POLYMER AND METHOD FOR FORMING RESIST PATTERN

摘要

Disclosed is a polymerizable fluorine-containing monomer which is suitable for a resist layer and a protective layer in a resist multilayer body for forming a fine pattern during production of a semiconductor device or the like. This polymerizable fluorine-containing monomer is particularly useful in immersion lithography wherein water is used as a liquid medium. Also disclosed are a fluorine-containing polymer and a method for forming a resist pattern. Specifically disclosed is a polymerizable fluorine-containing monomer represented by the formula (1) below. Also disclosed are a homopolymer or copolymer of such a polymerizable fluorine-containing monomer, and a method for forming a resist pattern by immersion lithography using such a polymerizable fluorine-containing monomer, or a homopolymer or copolymer thereof. (1) (In the formula, R1 represents a hydrogen atom, or a chain or cyclic, saturated or unsaturated monovalent hydrocarbon group having 1-15 carbon atoms which may contain an oxygen atom, a nitrogen atom, a sulfur atom or a halogen atom.)