| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a non-volatile semiconductor memory element having a cell structure of single layer polysilicon which can be manufactured in a standard MOS process. <P>SOLUTION: This non-volatile semiconductor element has a transistor configuration comprising a floating gate FG formed on a semiconductor substrate SUB, a drain D, and a source S. Charges are injected into and accumulated in the floating gate FG by impressing a voltage between the source S and the drain D, and when erasing the charges accumulated in the floating gate FG, a voltage is impressed between the semiconductor substrate SUB and the drain D or the source S to generate a hot hole due to Band to Band in the semiconductor substrate SUB, and the charges accumulated in the floating gate FG is erased by the hot hole. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
