| 摘要 |
PROBLEM TO BE SOLVED: To provide an improved chemical vapor deposition apparatus which supplies reaction gas from an outside to a center portion of a reaction furnace and is capable of consistently and stably performing vapor deposition of a growing layer on a surface of a wafer. SOLUTION: The chemical vapor deposition apparatus includes a reaction chamber having a susceptor on which a wafer is loaded and a reaction furnace in which the wafer is processed by chemical vapor deposition, a gas introduction unit disposed at an outer wall of the reaction chamber to supply reaction gas from an outside of the reaction furnace to a center portion of the reaction furnace in a flowing manner, and a gas exhaust unit which is disposed at a center portion of the reaction chamber to discharge the reaction gas to an upper or lower part of the reaction chamber after the reaction gas is used for a reaction in the reaction furnace. Therefore, the gas density inside the chamber can be kept at a substantially uniform state even when the process pressure is increased under the condition that for grows a high-temperature deposition layer. COPYRIGHT: (C)2009,JPO&INPIT
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