| 摘要 |
<p>Disclosed is a semiconductor light emitting device wherein many hexagonally-shaped semiconductor light emitting elements are two-dimensionally formed, and a positive electrode and a negative electrode are formed on the side of a light extraction surface so that light extraction efficiency does not deteriorate. A mask (11) for selective growth is formed on a substrate (1) for growth, and an AlN buffer layer (2) is formed on a region from which a part of the mask (11) is removed. On the AlN buffer layer (2), an undoped GaN layer (3), an n-type GaN layer (4), an active layer (5), a p-type GaN layer (6) are sequentially laminated, and an isolation groove (A) is formed for isolating the elements from each other. A p-electrode (8) and an n-electrode (7) of each semiconductor light emitting element (D) are formed on the side of the hexagonally-shaped light extraction surface, and the p-electrodes or the n-electrodes of the adjacent semiconductor light emitting elements are arranged adjacent to each other with the isolating groove (A) in between.</p> |
