| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory device capable of simultaneously carrying out CBR refreshing of a normal area and CBR refreshing of a redundancy area once for eachpredetermined frequency of CBR refresh operation of the normal area at the refresh test of the redundancy area. SOLUTION: A redundancy word refresh counter 11 is prepared in addition to a normal word refresh counter 5 which generates the address of the word line for refreshing the normal area 2 in a memory cell array 1. This redundancy word refresh counter 11 generates the address of the word line for refreshing the redundancy area 3 for each predetermined frequency of CBR refresh operation of the normal area 2 on the basis of address data generated by the normal word refresh counter 5. The CBR refreshing of the redundancy area 3 is carried out according to the address generated by the redundancy word refresh counter 11. COPYRIGHT: (C)2009,JPO&INPIT |
