发明名称 |
SEMICONDUCTOR DEVICE DEFECT TYPE DETERMINATION METHOD AND STRUCTURE |
摘要 |
A semiconductor defect type determination method and structure. The method includes providing a semiconductor wafer comprising a first field effect transistor (FET) comprising a first type of structure and a second FET comprising a second different type of structure. A first procedure is performed to determine if a first current flow exists between a first conductive layer formed on the first FET and a second conductive layer formed on the first FET. A second procedure is performed to determine if a second current flow exists between a third conductive layer formed the second FET and a fourth conductive layer formed on the second FET. A determination is made from combining results of the first procedure and results of the second procedure that the first FET and the second FET each comprise a specified type of defect.
|
申请公布号 |
US2009179661(A1) |
申请公布日期 |
2009.07.16 |
申请号 |
US20080972125 |
申请日期 |
2008.01.10 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
AHSAN ISHTIAQ;MCKNIGHT ANDREW ALEXANDER;ONISHI KATSUNORI;TABAKMAN KEITH HOWARD |
分类号 |
G01R31/26 |
主分类号 |
G01R31/26 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|