摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a low-cost junction material containing no lead and having a high melting temperature, and to secure the proper mounting and electrical reliability of a semiconductor device. <P>SOLUTION: With reference to a semiconductor device to be joined to a mother board using a junction material of 200°C to 230°C melting point, a Bi alloy containing Cu of 0.8 to 10 wt.% and Ge of 0.02 to 0.2 wt.% is adopted as a junction material 15, i.e., a die bonding material to join a semiconductor element 13 to a semiconductor substrate 11. As a result, in the case where the semiconductor device is joined to the mother board by reflow, the connection failure of the semiconductor element 13 is suppressed, and the proper mounting and electrical reliability of the semiconductor device is secured, as the junction material 15 to join the semiconductor element 11 to the semiconductor substrate 13 does not melt. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |