发明名称 PLASMA PROCESSING APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a plasma processing apparatus capable of processing a sample to be processed stably for a long period by reducing damage to a processing chamber wall surface. SOLUTION: Disclosed is the plasma processing apparatus that processes the sample placed in a processing chamber in a vacuum container using plasma generated in the processing chamber, wherein the plasma processing apparatus includes an in-processing-chamber member which is disposed in the processing chamber to face the plasma and made of quartz containing 0.05 to 0.5% by weight of yttrium or 0.1 to 1% by weight of aluminum. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009158732(A) 申请公布日期 2009.07.16
申请号 JP20070335514 申请日期 2007.12.27
申请人 HITACHI HIGH-TECHNOLOGIES CORP 发明人 KAWAGUCHI TADAYOSHI;KIKKAI MOTOHIKO;FURUSE MUNEO
分类号 H01L21/3065 主分类号 H01L21/3065
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