发明名称 |
PLASMA PROCESSING APPARATUS |
摘要 |
PROBLEM TO BE SOLVED: To provide a plasma processing apparatus capable of processing a sample to be processed stably for a long period by reducing damage to a processing chamber wall surface. SOLUTION: Disclosed is the plasma processing apparatus that processes the sample placed in a processing chamber in a vacuum container using plasma generated in the processing chamber, wherein the plasma processing apparatus includes an in-processing-chamber member which is disposed in the processing chamber to face the plasma and made of quartz containing 0.05 to 0.5% by weight of yttrium or 0.1 to 1% by weight of aluminum. COPYRIGHT: (C)2009,JPO&INPIT
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申请公布号 |
JP2009158732(A) |
申请公布日期 |
2009.07.16 |
申请号 |
JP20070335514 |
申请日期 |
2007.12.27 |
申请人 |
HITACHI HIGH-TECHNOLOGIES CORP |
发明人 |
KAWAGUCHI TADAYOSHI;KIKKAI MOTOHIKO;FURUSE MUNEO |
分类号 |
H01L21/3065 |
主分类号 |
H01L21/3065 |
代理机构 |
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