| 摘要 |
PROBLEM TO BE SOLVED: To provide a growing method of compound semiconductor crystal and a manufacturing apparatus of single crystal which are capable of growing single crystal having a good quality without deteriorating the quality of crystal that grows on seed crystal by preventing the fine particles that have been crystallized before they reach to the seed crystal from adhering to the seed crystal. SOLUTION: In a manufacturing apparatus 10 of single crystal which has a vessel 11 that is substantially sealed and has a raw material holding part 14 that holds a raw material 12 of compound semiconductor crystal and a seed crystal holding part 15 that holds seed crystal 13 of a compound semiconductor, and which has a heating means for heating the vessel 11 so that the raw material holding part 14 becomes higher temperature than the seed crystal holding part 15, wherein the vessel 11 is arranged so that the raw material holding part 14 and the seed crystal holding part 15 are nearly horizontal, and the interval L between the raw material holding part 14 and the seed crystal holding part 15 is larger than the width of the vessel 11 when viewed in the cross-sectional direction against the moving direction of the raw material gas. COPYRIGHT: (C)2009,JPO&INPIT
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