| 摘要 |
<p>A plasma processing apparatus, comprises: a RF driving electrode(25) and a passive electrode (22) mounted face to face; a first grounded ring (23) surrounding but insulated from the passive electrode (22); a second grounded ring (26) surrounding but insulated from the RF drive electrode(25); wherein the RF driving electrode (25) is connected with a first RF source (271) and a second RF source (272) respectively, a first impedance adjusting element is connected in series between the passive electrode (22) and the grounding. The plasma processing apparatus overcomes the shortcoming that plasma energy is only changed over among some certain isolated points, and thus the technical process with different plasma density requirements can be carried out in one and the same reaction chamber.</p> |
