发明名称 STACKED SEMICONDUCTOR DEVICE, SEMICONDUCTOR SUBSTRATE, AND PROCESS FOR MANUFACTURING STACKED SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a stacked semiconductor device which prevents chipping from occurring easily in a manufacturing process. <P>SOLUTION: In the stacked semiconductor device, semiconductor substrates 8 each having a circuit region 9 in which bumps 7 are formed at a predetermined distribution density are stacked by bonding the bumps 7 thus forming a stacked semiconductor element, wherein dummy bumps 11 are formed on the periphery 10 of a semiconductor substrate 1 at a distribution density higher than that of the bumps 7 in the circuit region 9 in tight contact with the semiconductor substrate 1, and the dummy bumps 11 of the semiconductor substrates 1 are bonded to each other. <P>COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009158764(A) 申请公布日期 2009.07.16
申请号 JP20070336212 申请日期 2007.12.27
申请人 NIKON CORP 发明人 OKAMOTO KAZUYA;MATSUOKA SHINGO
分类号 H01L25/065;H01L21/60;H01L25/07;H01L25/18 主分类号 H01L25/065
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