| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a pattern forming method to cure a first time resist film by irradiation of light extremely short in wavelength of 300 nm or less and to prevent dissolution of a first time resist pattern into a developing agent at first and second time resist film mixing and second time development, and a resist material used for the method. <P>SOLUTION: This pattern forming method has steps of forming a first resist film by applying on a substrate a first positive type resist material containing a high molecular compound obtained by copolymerizing a phenolic group-containing repetition units and repetition units whose alkali solubility improves with an acid, exposing the film with high energy rays after heat treatment, developing the film with a developing agent, then crosslinking and curing a first resist film 30 by irradiation of high energy rays with a wavelength of 300 nm or less, forming a second resist film 50 by applying a second positive type resist material on the substrate additionally, exposing the second resist film 50 with high energy rays after heat-treatment, and developing the second resist film using the developing agent after heat-treatment. Therefore, double patterning can be performed by insolubilizing a first pattern after formation with the first positive type resist material, applying the second resist material on it, and forming a second pattern in a space portion of the first pattern, and thus the substrate can be processed with one time of dry etching. <P>COPYRIGHT: (C)2009,JPO&INPIT |
