| 摘要 |
PROBLEM TO BE SOLVED: To obtain a display device having a high aperture ratio and also having a storage capacitor large in capacitance. SOLUTION: The display device comprises: a thin film transistor including a gate electrode formed of a first conductive film, a gate insulating film formed of a first insulating layer over the first conductive film, a first semiconductor layer being over the first insulating layer and overlapping the gate electrode, a channel protective film formed of a second insulating layer being over the first semiconductor layer and overlapping the gate electrode, a conductive second semiconductor layer overlapping the first semiconductor layer and divided into a source region and a drain region, and a source electrode and a drain electrode formed of a second conductive film over the second semiconductor layer; a third insulating layer formed over the second conductive film; a pixel electrode formed of a third conductive film over the third insulating layer and connected to one of the source electrode and the drain electrode; capacitor wiring over the first insulating layer; and a storage capacitor formed in a region where the capacitor wiring and the pixel electrode overlap with the third insulating layer over the capacitor wiring interposed therebetween. A method for manufacturing the display device is provided. COPYRIGHT: (C)2009,JPO&INPIT |
