| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device in a COF structure wherein the decline of insulation caused by migration which occurs under a high temperature and high humidity is suppressed. SOLUTION: The manufacturing method of the semiconductor device in the COF structure comprises: a process of loading a semiconductor chip 2 in the semiconductor chip loading region 3c of an FPC 3 where a circuit having the semiconductor chip loading region 3c is formed on a base material film 3a; a process of injecting a liquid epoxy resin composition to a gap formed between the FPC 3 and the semiconductor chip 2; and a process of curing the liquid epoxy resin composition injected to the gap. The liquid epoxy resin composition contains an epoxy resin, an acid anhydride based curing agent and a curing accelerator, and before injecting the liquid epoxy resin composition to the gap, an organic solvent capable of swelling the base material film 3a is applied to the FPC 3. COPYRIGHT: (C)2009,JPO&INPIT
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