发明名称 SEMICONDUCTOR DEVICE AND CAPACITANCE VALUE CALCULATION METHOD
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device with a region occupied by a decoupling capacitance optimized. SOLUTION: The semiconductor device 21 includes: instances 32a to 32c connected between a first power line LH and a second power line LL; and the decoupling capacitance 33 connected between the first power line LH and the second power line LL. A wiring LS to propagate a signal is connected to the instances 32a to 32c. The capacitance value of the decoupling capacitance 33 is of a capacitance value based on an allowable delay variation depending on the period from a change in input signal to a change in output signal of the wiring LS, and the allowable voltage variation depending on the voltage between the first power line LH and the second power line LL. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009158566(A) 申请公布日期 2009.07.16
申请号 JP20070332298 申请日期 2007.12.25
申请人 FUJITSU MICROELECTRONICS LTD 发明人 OKUMURA TAKAMASA
分类号 H01L21/822;G06F17/50;H01L21/82;H01L27/04 主分类号 H01L21/822
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