| 摘要 |
PROBLEM TO BE SOLVED: To manufacture a semiconductor device having a (111)-aligned ferroelectric film without a variation in alignment. SOLUTION: Disclosed is the manufacturing method of the semiconductor device including the ferroelectric film, wherein the ferroelectric film is formed through (A) a stage of switching the atmosphere in a treatment container in which a substrate to be treated where the semiconductor device is formed is held from a first atmosphere to a second atmosphere and (B) a stage of forming the ferroelectric film on the substrate to be treated in the second atmosphere by an organic metal vapor-phase deposition method using as a raw material an organic metal compound supplied from a raw material gas supply line. The stage (B) is started by starting supplying the raw material gas to the treatment container after the lapse of a predetermined gas stabilization time after the stage (A), and the predetermined gas stabilization time is set longer than a time (V/L) obtained by dividing the total V of the capacity of an atmospheric gas line and the capacity of a mixing/discharging portion by the flow rate L of a mixed gas in the atmospheric gas line. COPYRIGHT: (C)2009,JPO&INPIT
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