SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide techniques for improving the performance of a high-frequency power amplifier mounted on an RF module for a mobile phone. SOLUTION: A gate protective diode GD1 is composed of an n-type region formed on a main surface of a p-type epitaxial layer, a first p-type region formed at a center part of a main surface of the n-type region, a second p-type region formed on a main surface of an epitaxial layer from a peripheral part of the main surface of the n-type region to a circumference of the n-type region, and a p+-type buried layer 8 connecting the second p-type region and a substrate main body to each other, and is connected to the gate of a high-frequency silicon power MIS, wherein the distance between an end 8a of the p+-type buried layer 8 and an n+-type semiconductor region 15 forming the n-type region is defined as≥7μm. Consequently, even when the resistance of the substrate main body for improving characteristics of the high-frequency silicon power MIS is made small, an influence of a defect etc., generated owing to stress generated at the end 8a of the p+-type buried layer 8 on a leakage current of the gate protective diode GD1 becomes small. COPYRIGHT: (C)2009,JPO&INPIT