| 摘要 |
The photosensor comprises an insulating layer formed over the silicon substrate; an ultraviolet photosensitive element formed over the insulating layer and having a first diffusion layer, a second diffusion layer provided spaced away from the first diffusion layer, and a third diffusion layer connected with the first diffusion layer and the second diffusion layer respectively; and a visible light photosensitive element formed over the insulating layer with being spaced away from the ultraviolet photosensitive element, and having a fourth diffusion layer, a fifth diffusion layer provided spaced away from the fourth diffusion layer, and a sixth diffusion layer connected with the fourth diffusion layer and the fifth diffusion layer respectively.
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