摘要 |
<p>A semiconductor light modulator is provided with a first semiconductor light waveguide composed of a multilayer structure which includes a core layer, a first clad layer and a second clad layer arranged on a lower section and an upper section, respectively, with the core layer therebetween, and a barrier layer inserted between the second clad layer and the core layer; a second semiconductor light waveguide composed of a multilayer structure having a p-type semiconductor wherein the second clad layer locally penetrates in the laminating direction in an n-type semiconductor, in the multilayer structure of the first semiconductor light waveguide; a first electrode connected to the first clad layer of the first semiconductor light waveguide; and a second electrode which electrically connects the second clad layer of the first semiconductor light waveguide and the p-type semiconductor of the second clad layer of the second semiconductor light waveguide to each other.</p> |
申请人 |
NTT ELECTRONICS CORPORATION;NIPPON TELEGRAPH AND TELEPHONE CORPORATION;ISHIBASHI, TADAO;MARUYAMA, KAZUHIRO;KOBAYASHI, KENJI;AKEYOSHI, TOMOYUKI;KIKUCHI, NOBUHIRO;TSUZUKI, KEN;ISHIKAWA, MITSUTERU |
发明人 |
ISHIBASHI, TADAO;MARUYAMA, KAZUHIRO;KOBAYASHI, KENJI;AKEYOSHI, TOMOYUKI;KIKUCHI, NOBUHIRO;TSUZUKI, KEN;ISHIKAWA, MITSUTERU |