| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a field-effect transistor for semiconductor sensing of high sensitivity and high selectivity that suppresses leak current in a gate while fully securing the adhesiveness of a gate insulating layer with an Au layer, and to provide a semiconductor sensing device using this. <P>SOLUTION: This field-effect transistor for semiconductor sensing is constituted by stacking the Au layer on the gate insulating layer of a field-effect transistor having the gate insulating layer on silicone via an organic silane monomolecular film, and the semiconductor sensing device are constituted. By appropriately selecting effective sensing of molecular level, further, a sensor molecule and substance to be detected, selective detection of a useful mirror image isomer (chiral molecule) is allowed in analysis of biological molecule or the like. <P>COPYRIGHT: (C)2009,JPO&INPIT |
