| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device in which a read test can be performed by the path same as that of normal read without adding a test circuit to a read path. <P>SOLUTION: The nonvolatile semiconductor memory device has a memory cell array constituted by arranging a plurality of electrically rewritable nonvolatile memory cells, a parity generating circuit generating a check code used for error correction based on input data input from the outside, a first write control circuit writing the input data in the memory cell array, a second write control circuit writing the check code in the memory cell array, and an internal control circuit for performing control to decide whether write operation by the first control circuit is performed or not, or whether write operation by the second write operation is performed or not. <P>COPYRIGHT: (C)2009,JPO&INPIT |
