发明名称 MEMORY SYSTEM
摘要 <p><P>PROBLEM TO BE SOLVED: To prevent the occurrence of erroneous write to a NAND flash memory. <P>SOLUTION: A memory system includes the NAND flash memory 11 including a memory block containing a plurality of pages, and a controller which controls write of data to the flash memory, and includes a scrambling circuit 26 which converts the data into a pseudo random number. The scrambling circuit includes an initial value generation circuit 36 which generates an initial value for every segment, an initial value shifting circuit 38 which shifts the initial value by N bits for every page address, a pseudo random number generation circuit 39 which generates a pseudo random number sequence by an M-sequence by using the initial value shifted N bits, and a random number adding circuit 33 which adds the pseudo random number sequence to the data. <P>COPYRIGHT: (C)2009,JPO&INPIT</p>
申请公布号 JP2009157841(A) 申请公布日期 2009.07.16
申请号 JP20070338247 申请日期 2007.12.27
申请人 TOSHIBA CORP 发明人 KIMURA TOSHIRO
分类号 G06F12/16;G11C16/02;G11C16/04 主分类号 G06F12/16
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