| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a device which is excellent in the control property of drain voltage by improving stability in control of applied voltage of a memory cell in a nonvolatile semiconductor memory device. <P>SOLUTION: The nonvolatile semiconductor memory device includes: a plurality of memory cells; a write buffer to which data to be written into the plurality of memory cells are input; a count circuit in which data input to the write buffer is searched and the number of bits of data programmed simultaneously to the plurality of memory cells is decided; a write circuit providing write voltage to the plurality of memory cells in accordance with the data; and a voltage regulator outputting a voltage Vpb for control to the write circuit, wherein, the voltage regulator includes a control means in which a dummy current circuit is connected to the output of the voltage regulator, the dummy current quantity of the dummy current circuit is controlled in accordance with the number of bits of write, and the current supply quantity of voltage regulator is controlled to be fixed. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
