SEMICONDUCTOR DEVICE AND CONTROL METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To increase readout margin by suppressing the generation of a fringe current in the readout of data from a memory cell.

SOLUTION: A semiconductor device includes: a plurality of memory cells 26 including a charge storage layer 14 comprising an insulating film provided on a semiconductor substrate 10 and arranged in a matrix; a plurality of word lines provided on the charge storage layer so that each of the plurality of memory cells disposed at the same row from among the plurality of memory cells arranged in the matrix is connected to the same word line 20; and an application part 28 applying a voltage to a selected word line WL2 connected to the selected memory cell from among the plurality of word lines and applying a voltage of a polarity opposite to the voltage applied to the selected word line to non-selected word lines WL1 and WL3 disposed at both sides of the selected word line in reading the data from the selected memory cell S selected from among the plurality of memory cells.

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