THIN-FILM TRANSISTOR SUBSTRATE, AND MANUFACTURING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method for a thin-film transistor substrate which can improve the characteristic of a TFT, and to provide a thin-film transistor substrate obtained by the manufacturing method. SOLUTION: In the manufacturing method for the thin-film transistor substrate 1 having a gate insulating film 14g made of a silicon oxide, an oxygen plasma processing is performed just after forming the gate insulating film 14g (an insulating film 14). Thereafter, a water-vapor processing is performed after forming a gate electrode. COPYRIGHT: (C)2009,JPO&INPIT