| 摘要 |
<P>PROBLEM TO BE SOLVED: To raise the surge breakdown voltage, by making the widths of fins being smaller in distances from a gate contact to be larger than with the widths of fins being larger in distances from the gate contact. <P>SOLUTION: A semiconductor device comprises: multiple fins 15a-15f which are composed of a semiconductor layer; a gate electrode 17, in which gates G1-G6 provided on side surfaces of the multiple fins 15a-15f via a gate insulating film 16 are electrically connected to one another; sources S1-S6 and drains D1-D6, which are provided in the multiple fins 15a-15f so that the gate electrode 17 is located between the sources and the drains; a source electrode 19, which electrically connects the multiple sources S1-S6; a drain electrode 18, which electrically connects the multiple drains D1-D6; and a gate contact 20, which provides electricity to the gate electrode 17 from the outside. Of the plural fins 15a-15f, the fins 15a and 15b having smaller distances from the gate contact 20 have widths W1 and W2 which are greater than the widths W3-W6 of the fins 15c-15f, having greater distances from the gate contact 20. <P>COPYRIGHT: (C)2009,JPO&INPIT |
