| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem, wherein a foreign matter blocking plate is provided between a wafer processing chamber and a turbomolecular pump of a plasma CVD system, to prevent dropping of foreign matters from the wafer processing chamber, resulting in damaging the turbo molecular pump, namely, a macro foreign matter alone can be surely prevented from falling therefrom; however, conversely, due to this, entry of micro foreign matters, from the turbomolecular pump to the wafer processing chamber, cannot be avoided. SOLUTION: In this method of manufacturing semiconductor device, a foreign matter blocking plate 71 is provided in double in between a vapor phase processing chamber 52 of the CVD system and a turbomolecular pump 74, and conduct vapor phase processing is carried out. COPYRIGHT: (C)2009,JPO&INPIT
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