| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that can uniformly pass current through the end of a heterojunction interface in contact with a gate insulating film, exhibiting high cutoff performance. SOLUTION: In the semiconductor device, a hetero semiconductor corner region 10, which is a current-concentration relief region that prevents a reverse bias current from concentrating at the convex corner, is arranged in a hetero semiconductor region 3. Thereby, a current concentration at the convex corner can be prevented. As a result, an cutoff performance can be improved at the time of cutoff, and at the same time, generation of any hot spot at a specific portion is prevented at the time of conduction to suppress deterioration in a specific portion, thus ensuring a long-term reliability. Further, when a semiconductor chip 100 is used in an L load circuit or the like, for example at the time of conduction or during a transient response time to the cutoff state, even as for an index such as a short-circuit resistance amount and an avalanche resistance amount, which are indexes of a breakdown resistance when overcurrent or overvoltage occurs, the current concentration on a specific portion can be prevented, and thus these breakdown resistance can be also improved. COPYRIGHT: (C)2009,JPO&INPIT
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