发明名称 CRYSTAL GROWTH METHOD AND APPARATUS THEREFOR
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a single crystal having high quality and high uniformity while preventing changes in the composition during a process of crystal growth. <P>SOLUTION: The crystal growth apparatus to grow a crystal 29 while dipping and pulling a seed crystal 27 is equipped with: a first laser emitting visible light to detect a floating crystal deposited on the surface of a source solution 28; a second laser emitting a laser beam for heating to melt the floating crystal; a means 32 for emitting the visible light from the first laser onto the optical axis of the laser beam from the second laser; and a control means 33 adjusting the irradiation positions of the first and second lasers so as to irradiate the floating crystal with the visible light. <P>COPYRIGHT: (C)2009,JPO&INPIT</p>
申请公布号 JP2009155182(A) 申请公布日期 2009.07.16
申请号 JP20070337890 申请日期 2007.12.27
申请人 NIPPON TELEGR & TELEPH CORP <NTT>;NTT ADVANCED TECHNOLOGY CORP 发明人 SASAURA MASAHIRO;IMAI TADAYUKI;FUJIURA KAZUO;KOMATSU TAKAYUKI;KODA HIROKI
分类号 C30B15/14;C01G33/00;C01G35/00;C30B17/00;C30B29/30;H01L41/18;H01L41/39;H01L41/41 主分类号 C30B15/14
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