发明名称 |
CRYSTAL GROWTH METHOD AND APPARATUS THEREFOR |
摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a single crystal having high quality and high uniformity while preventing changes in the composition during a process of crystal growth. <P>SOLUTION: The crystal growth apparatus to grow a crystal 29 while dipping and pulling a seed crystal 27 is equipped with: a first laser emitting visible light to detect a floating crystal deposited on the surface of a source solution 28; a second laser emitting a laser beam for heating to melt the floating crystal; a means 32 for emitting the visible light from the first laser onto the optical axis of the laser beam from the second laser; and a control means 33 adjusting the irradiation positions of the first and second lasers so as to irradiate the floating crystal with the visible light. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
申请公布号 |
JP2009155182(A) |
申请公布日期 |
2009.07.16 |
申请号 |
JP20070337890 |
申请日期 |
2007.12.27 |
申请人 |
NIPPON TELEGR & TELEPH CORP <NTT>;NTT ADVANCED TECHNOLOGY CORP |
发明人 |
SASAURA MASAHIRO;IMAI TADAYUKI;FUJIURA KAZUO;KOMATSU TAKAYUKI;KODA HIROKI |
分类号 |
C30B15/14;C01G33/00;C01G35/00;C30B17/00;C30B29/30;H01L41/18;H01L41/39;H01L41/41 |
主分类号 |
C30B15/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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