| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for selective oxidation of silicon-containing materials in a semiconductor device. <P>SOLUTION: A rapid thermal processing apparatus is used to selectively oxidize a substrate by in-situ steam generation at high pressure in a hydrogen rich atmosphere. Other materials, such as metals and barrier layers, in the substrate are not oxidized. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
