PROGRAMMABLE NONVOLATILE MEMORY AND SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

摘要

Distance lambdam between a floating gate and a drain contact of a floating gate transistor forming a memory cell is set to be greater than a distance lambda determined based on a minimum design dimension between a control gate and a contact of a peripheral transistor. Data retention characteristics of a programmable memory which stores data in accordance with the amount of accumulated charges in the floating gate can be ensured without being affecting by mask misalignment or the like.