OPTOELECTRONIC DEVICE INCLUDING NANOWIRES, AND CORRESPONDING METHODS

摘要

The invention relates to a method for making optoelectronic devices comprising nanowire semiconductors, in which: the nanowires (2) are formed on a substrate (1), said nanowires being capable of emitting a light beam; a first electric contact area is formed at the substrate, and a second electric contact area is formed at the nanowires, characterised in that the second electric contact area is formed on the edge of the nanowires (2) in direct contact with said nanowires, on a predetermined height (h) thereof and in the vicinity of their end opposite the substrate, as well as between said nanowires, the upper surface (20) of the nanowires being exposed.