| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of preparing an AlN substrate, which enables to prepare a good semiconductor element on an inexpensive Si substrate, in a short time. <P>SOLUTION: Ga having reactivity to Si is scattered on a dummy substrate 1 comprising Si, then heated to form an agglomerate to be an erosive body 2. When it is heated, Ga reacts with Si, the dummy substrate 1 is etched, and a concave part 3 and a convex part 4 are formed. Thereafter, when an AlN layer is grown, an integrated main substrate 5 is formed. Accordingly, the main substrate 5 is grown from the convex part 4 on a thin wall, hardly effected by a strain caused by the difference of thermal expansion coefficient between the substrate 1 and the substrate 5, and an AlN substrate 5 of good quality crystal, little in through dislocation, can be prepared on an inexpensive Si substrate 1. Also, since erosive bodies 2 are very small when compared with projection and recession by conventional photolithograph formation and the like and they are scattered on the dummy substrate 1, a flat main substrate 5 can be prepared in a short time, even it is an AlN slow in the growth in the lateral direction. <P>COPYRIGHT: (C)2009,JPO&INPIT |
