发明名称 CHEMICAL VAPOR DEPOSITION REACTOR
摘要 A CVD reactor, such as a MOCVD reactor conducting metalorganic chemical vapor deposition of epitaxial layers, is provided. The CVD or MOCVD reactor generally comprises a flow flange assembly, adjustable proportional flow injector assembly, a chamber assembly, and a multi-segment center rotation shaft. The reactor provides a novel geometry to specific components that function to reduce the gas usage while also improving the performance of the deposition.
申请公布号 WO2009049020(A3) 申请公布日期 2009.07.16
申请号 WO2008US79301 申请日期 2008.10.09
申请人 VALENCE PROCESS EQUIPMENT, INC.;BEGARNEY, MICHAEL, J.;CAMPANALE, FRANK, J. 发明人 BEGARNEY, MICHAEL, J.;CAMPANALE, FRANK, J.
分类号 C23C16/00 主分类号 C23C16/00
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