| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of preventing a crystal defect from spreading over a wide range even if caused at a periphery of a trench for a pattern. <P>SOLUTION: On a surface of a semiconductor layer 2, an alignment pattern 7A is formed. The alignment pattern 7A includes a plurality of linear portions 13 having a width (b) (b>a, e.g., 6 μm). Trenches 14 for the alignment pattern have corner portions 23 at ends of the linear portions 13 of the alignment pattern 7A. At a surface layer portion of the semiconductor layer 2, a first annular pattern 8 is formed which surrounds respective alignment patterns 7A and 7B. The width of the first annular pattern 8 is set to a dimension (a) equal to the width of a separation portion 4. A bent portion 8B of the first annular pattern 8 is formed in an arcuate shape and the radius c2 of curvature of an outer peripheral edge thereof is set to ≥11 μm. <P>COPYRIGHT: (C)2009,JPO&INPIT |
