| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a film containing cubic boron nitride having a shape suitable for electron emission. <P>SOLUTION: The field electron emitter comprises a film excellent in electron emission using a film containing cubic boron nitride having high crystallinity, sufficient film thickness, adhesion, and high-density fine projections on the surface. The film contains cubic boron nitride formed by a method for depositing boron nitride by using plasma from molecular species containing boron, nitrogen and fluorine. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
